Buch


Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Jennifer Rupp; Daniele Ielmini; Ilia Valov (Hrsg.)

 

171,19 EUR
Lieferzeit 12-13 Tage



171,19 EUR
Lieferzeit 12-13 Tage



Autorinformation
Inhaltsverzeichnis


Übersicht


Verlag : Springer International Publishing
Buchreihe : Electronic Materials: Science & Technology
Sprache : Englisch
Erschienen : 16. 10. 2021
Seiten : 250
Einband : Gebunden
Höhe : 235 mm
Breite : 155 mm
ISBN : 9783030424237
Sprache : Englisch

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Autorinformation


Prof. Jennifer Rupp is the Thomas Lord Associate Professor of Electrochemical Materials at theDepartment of Materials Science and Engineering, and Assistant Professor at the Department ofElectrical Engineering and Computer Science at MIT. Prior she is was non-tenure track assistantprofessor at ETH Zurich Switzerland where she held two prestigeous externally funded careergrants, namely an ERC Starting Grant (SNSF) and Swiss National Science Foundation (SNF)professorship.

Inhaltsverzeichnis


Preface.- Memristive computing devices and applications.- Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication.- Modeling resistive switching materials and devices across scales.- Review of mechanisms proposed for redox based resistive switching structures.- Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices.- Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups.- SiO2 based conductive bridging random access memory.- Reset switching statistics of TaOx-based Memristor.- Effect of O2- migration in Pt/HfO2/Ti/Pt structure.- Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer.- Interface-type resistive switching in perovskite materials.- Volume Resistive Switching in metallic perovskite oxides driven by theMetal-Insulator Transition.- Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature.- Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions.- Resistive switching memory using biomaterials.- Optical memristive switches.

Deine Buchhandlung


Buchhandlung LeseLust
Inh. Gernod Siering

Georgenstraße 2
99817 Eisenach

03691/733822
kontakt@leselust-eisenach.de

Montag-Freitag 9-17 Uhr
Sonnabend 10-14 Uhr



Deine Buchhandlung
Buchhandlung LeseLust
Inh. Gernod Siering

Georgenstraße 2
99817 Eisenach

03691/733822
kontakt@leselust-eisenach.de

Montag-Freitag 9-17 Uhr
Sonnabend 10-14 Uhr